Role of pH of precursor solution in taming the material properties of spray pyrolysed SnS thin films

被引：32
作者：
Sajeesh, T. H. [1 ]
Jinesh, K. B. [2 ]
Kartha, C. Sudha [1 ]
Vijayakumar, K. P. [1 ]
机构：
[1] Cochin Univ Sci & Technol, Dept Phys, Cochin 682022, Kerala, India
[2] Nanyang Technol Univ, ERI N, Singapore 639798, Singapore
来源：
APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 18期
关键词：
Chemical spray pyrolysis; Photovoltaic; Compound semiconductors; Thin films; Opto-electronic properties; Structural properties; PHYSICAL-PROPERTIES; DEPOSITION; THICKNESS; GROWTH;
D O I：
10.1016/j.apsusc.2012.03.121
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Samples were deposited using chemical spray pyrolysis technique by varying the pH of the starting precursor solution from 0.8 to 3.2. These samples were analyzed using X-ray diffraction, optical absorption spectroscopy, energy dispersive X-ray analysis, scanning electron microscopy, and electrical measurements in order to investigate the role of pH of the precursor solution on structural, morphological, electrical and optical properties of the SnS films. From the study we could optimize the pH of precursor solution required for the deposition of device quality SnS thin films. Resistivity of the films was brought down by three orders (to 6 x 10(-2) Omega cm) along with enhancement in grain size as well as photosensitivity by optimizing the pH of the precursor solution alone. Band gap of the films could also be tailored by controlling the pH of the precursor solution. (C) 2012 Elsevier B. V. All rights reserved.
引用
收藏
页码：6870 / 6875
页数：6
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