Ferroelectric phase stabilization of HfO2 by nitrogen doping

被引：104

作者：

Xu, Lun ^{[1
]}

Nishimura, Tomonori ^{[1
]}

Shibayama, Shigehisa ^{[1
]}

Yajima, Takeaki ^{[1
]}

Migita, Shinji ^{[2
]}

Toriumi, Akira ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058569, Japan

来源：

APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 09期

关键词：

OXIDES; FILMS; ZRO2;

D O I：

10.7567/APEX.9.091501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report that nitrogen (N) doping can drive the ferroelectricity of HfO2. It was found that N doping can cause the transition from a monoclinic phase to a highly symmetric phase. The role of N doping is discussed from the viewpoints of charge balance and bond-constraining effects. The former is responsible for the structural transformation from a paraelectric phase to a ferroelectric phase by forming an oxygen vacancy. In addition, Hf-N and N-O bonds with covalent characteristics have strong effects on HfO2 structural and electrical properties, and thus contribute to a marked HfO2 para-/ferroelectric transition. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

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