Dynamical effects of defect photoluminescence from single SiO2 and Si nanoparticles

被引:3
|
作者
Chizhik, Alexey I. [1 ]
Schmidt, Torsten [2 ]
Chizhik, Anna M. [1 ]
Huisken, Friedrich [2 ]
Meixner, Alfred J. [1 ]
机构
[1] Univ Tubingen, Inst Phys & Theoret Chem, Morgenstelle 18, D-72076 Tubingen, Germany
[2] Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany
来源
SELECTED PAPERS FROM 17TH INTERNATIONAL CONFERENCE ON DYNAMICAL PROCESSES IN EXCITED STATES OF SOLIDS (DPC'10) | 2011年 / 13卷
关键词
Silicon nanocrystals; Silica nanoparticles; Defect luminescence; Single particle spectroscopy; Electron-phonon coupling; Transition dipole moment; SILICON NANOCRYSTALS; VISIBLE PHOTOLUMINESCENCE; OPTICAL-PROPERTIES; LUMINESCENCE; LIGHT; SHELL;
D O I
10.1016/j.phpro.2011.02.007
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We present results of photoluminescence (PL) studies of single SiO2 nanoparticles (SiO2 NPs) and single Si nanocrystals (Si NCs). Single particle spectroscopy reveals almost identical PL spectra for both kinds of nanosized systems. The emission curves exhibit a zero-phonon line and one or two phonon bands, which can be assigned to longitudinal optical phonons in SiO2. Using cylindrical vector beams for imaging the fluorescence of single particles we show that they possess a linear excitation transition dipole moment (TDM). Furthermore, the single particle fluorescence patterns demonstrate upon continuous excitation dynamical effects such as blinking, bleaching, and flipping of the TDM. The latter is related to a redistribution of defect states caused by charge fluctuations in the surrounding of the embedded NP. Excitation fluorescence images visualize the intermediate state resulting from the TDM flipping. (C) 2011 Published by Elsevier B. V.
引用
收藏
页数:5
相关论文
共 50 条
  • [41] Effects of hydrogen plasma annealing on the luminescence from a-Si:H/SiO2 and nc-Si/SiO2 multilayers
    Rui, Yunjun
    Chen, Deyuan
    Xu, Jun
    Li, Wei
    Cen, Zhanhong
    Huang, Xinfan
    Chen, Kunji
    APPLIED SURFACE SCIENCE, 2007, 253 (21) : 8647 - 8651
  • [42] Correlation between light emissions from amorphous-Si:H/SiO2 and nc-Si/SiO2 multilayers
    Ma Zhong-Yuan
    Han Pei-Gao
    Li Wei
    Chen De-Yuan
    Wei De-Yuan
    Qian Bo
    Li Wei
    Xu Jun
    Xu Ling
    Huang Xin-Fan
    Chen Kun-Ji
    Feng Duan
    CHINESE PHYSICS LETTERS, 2007, 24 (07) : 2064 - 2067
  • [43] Continuously tunable photoluminescence from Si+-implanted and thermally annealed SiO2 films
    Fischer, T
    PetrovaKoch, V
    Shcheglov, K
    Brandt, MS
    Koch, F
    THIN SOLID FILMS, 1996, 276 (1-2) : 100 - 103
  • [44] Formation and photoluminescence of Si quantum dots in SiO2/Si3N4 hybrid matrix for all-Si tandem solar cells
    Di, D.
    Perez-Wurfl, I.
    Conibeer, G.
    Green, M. A.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 94 (12) : 2238 - 2243
  • [45] Saturation of luminescence from Si nanocrystals embedded in SiO2
    Timmerman, D.
    Izeddin, I.
    Gregorkiewicz, T.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (01): : 183 - 187
  • [46] Luminescence tuning of Si/SiO2 nanoparticles in aqueous solutions
    Marcu, A.
    Sima, C.
    Grigoriu, C.
    Enculescu, I.
    Iliescu, B.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2008, 10 (11): : 3131 - 3134
  • [47] Study of Si/SiO2 nanoparticles produced by laser ablation
    Grigoriu, C.
    Suwa, K.
    Muray, K.
    Suematsu, H.
    Nicolae, I.
    Ciupina, V.
    Prodan, G.
    NANOPHOTONICS-USA, 2006, 6195
  • [48] Blue and red luminescence from Si ion-irradiated SiO2/Si/SiO2 layers
    Son, JH
    Kim, TG
    Shin, SW
    Kim, HB
    Lee, WS
    Im, S
    Song, JH
    Whang, CN
    Chae, KH
    OPTICAL MATERIALS, 2001, 17 (1-2) : 125 - 129
  • [49] Influence of a high electric field on the photoluminescence from silicon nanocrystals in SiO2
    Ioannou-Sougleridis, V
    Kamenev, B
    Kouvatsos, DN
    Nassiopoulou, AG
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 101 (1-3): : 324 - 328
  • [50] Carrier dynamics in Si nanocrystals in an SiO2 matrix investigated by transient light absorption
    de Boer, W. D. A. M.
    de Jong, E. M. L. D.
    Timmerman, D.
    Gregorkiewicz, T.
    Zhang, H.
    Buma, W. J.
    Poddubny, A. N.
    Prokofiev, A. A.
    Yassievich, I. N.
    PHYSICAL REVIEW B, 2013, 88 (15):