Controllable Coercive Field of Ferroelectric HfO2 UV-Ozone Surface Modification

被引:9
作者
Zhang, Yan [1 ,2 ]
Wang, Dao [1 ,2 ]
Luo, Chunlai [1 ,2 ]
Cheng, Jiayun [1 ,2 ]
Huo, Siying [1 ,2 ]
Zhang, Beijing [1 ,2 ]
Tao, Ruiqiang [1 ,2 ]
Chen, Deyang [1 ,2 ]
Fan, Zhen [1 ,2 ]
Dai, Ji-Yan [3 ]
Lu, Xubing [1 ,2 ]
Liu, J-M [4 ,5 ]
机构
[1] South China Normal Univ, Inst Adv Mat, South China Acad Adv Optoelect, Guangzhou 510006, Peoples R China
[2] South China Normal Univ, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, South China Acad Adv Optoelect, Guangzhou 510006, Peoples R China
[3] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Peoples R China
[4] Nanjing Univ, Lab Solid State Microstruct, Nanjing 21009, Peoples R China
[5] Nanjing Univ, Innovat Ctr Adv Microstruct, Nanjing 21009, Peoples R China
基金
中国国家自然科学基金;
关键词
Endurance; Hf0.5Zr0.5O2 (HZO) film; surface modification; RESIDUAL-STRESS; THIN-FILMS; POLARIZATION;
D O I
10.1109/TED.2022.3164856
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The endurance limitation related to high coercive fields (E-c) has been one of the substantial challenges to future memory applications of ferroelectric HfO2 films. In this work, we demonstrate a simple, efficient, and accurate method to regulate the E-c value of Hf0.5Zr0.5O2 (HZO) films via interface modification through ultraviolet-ozone (UV-O-3) irradiation on the surface of bottom electrode. Growth behaviors and ferroelectricity of HZO films were systematically investigated by varying UV-O-3 irradiation time. HZO samples show a well-controlled E-c upon a suitable UV-O-3 irradiation time. Compared with the w/o sample, the E-c value of 30-min irradiated sample drops by similar to 29.5%, and a comparatively high 2P(r) of 28.6 mu C/cm(2) remains. The tuning of E-c is clarified to be due to the ratio change of orthogonal and tetragonal phases in HZO films, which can be well controlled by the change of surface energy of the bottom electrode via varying the UV-O-3 irradiation time.
引用
收藏
页码:3094 / 3099
页数:6
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