Controllable Coercive Field of Ferroelectric HfO2 UV-Ozone Surface Modification

被引：9
作者：
Zhang, Yan [1 ,2 ]
Wang, Dao [1 ,2 ]
Luo, Chunlai [1 ,2 ]
Cheng, Jiayun [1 ,2 ]
Huo, Siying [1 ,2 ]
Zhang, Beijing [1 ,2 ]
Tao, Ruiqiang [1 ,2 ]
Chen, Deyang [1 ,2 ]
Fan, Zhen [1 ,2 ]
Dai, Ji-Yan [3 ]
Lu, Xubing [1 ,2 ]
Liu, J-M [4 ,5 ]
机构：
[1] South China Normal Univ, Inst Adv Mat, South China Acad Adv Optoelect, Guangzhou 510006, Peoples R China
[2] South China Normal Univ, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, South China Acad Adv Optoelect, Guangzhou 510006, Peoples R China
[3] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Peoples R China
[4] Nanjing Univ, Lab Solid State Microstruct, Nanjing 21009, Peoples R China
[5] Nanjing Univ, Innovat Ctr Adv Microstruct, Nanjing 21009, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 06期
基金：
中国国家自然科学基金;
关键词：
Endurance; Hf0.5Zr0.5O2 (HZO) film; surface modification; RESIDUAL-STRESS; THIN-FILMS; POLARIZATION;
D O I：
10.1109/TED.2022.3164856
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The endurance limitation related to high coercive fields (E-c) has been one of the substantial challenges to future memory applications of ferroelectric HfO2 films. In this work, we demonstrate a simple, efficient, and accurate method to regulate the E-c value of Hf0.5Zr0.5O2 (HZO) films via interface modification through ultraviolet-ozone (UV-O-3) irradiation on the surface of bottom electrode. Growth behaviors and ferroelectricity of HZO films were systematically investigated by varying UV-O-3 irradiation time. HZO samples show a well-controlled E-c upon a suitable UV-O-3 irradiation time. Compared with the w/o sample, the E-c value of 30-min irradiated sample drops by similar to 29.5%, and a comparatively high 2P(r) of 28.6 mu C/cm(2) remains. The tuning of E-c is clarified to be due to the ratio change of orthogonal and tetragonal phases in HZO films, which can be well controlled by the change of surface energy of the bottom electrode via varying the UV-O-3 irradiation time.
引用
收藏
页码：3094 / 3099
页数：6
相关论文
共 40 条
  • [1] Low power W:AlOx/WOx bilayer resistive switching structure based on conductive filament formation and rupture mechanism
    Bai, Yue
    Wu, Huaqiang
    Zhang, Ye
    Wu, Minghao
    Zhang, Jinyu
    Deng, Ning
    Qian, He
    Yu, Zhiping
    [J]. APPLIED PHYSICS LETTERS, 2013, 102 (17)
  • [2] Effects of oxygen partial pressure and annealing temperature on the residual stress of hafnium oxide thin-films on silicon using synchrotron-based grazing incidence X-ray diffraction
    Biswas, Debaleen
    Sinh, Anil Kumar
    Chakraborty, Supratic
    [J]. APPLIED SURFACE SCIENCE, 2016, 384 : 376 - 379
  • [3] Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode
    Cao, Rongrong
    Song, Bing
    Shang, D. S.
    Yang, Yang
    Luo, Qing
    Wu, Shuyu
    Li, Yue
    Wang, Yan
    Lv, Hangbing
    Liu, Qi
    Liu, Ming
    [J]. IEEE ELECTRON DEVICE LETTERS, 2019, 40 (11) : 1744 - 1747
  • [4] Enhanced ferroelectricity in ultrathin films grown directly on silicon
    Cheema, Suraj S.
    Kwon, Daewoong
    Shanker, Nirmaan
    dos Reis, Roberto
    Hsu, Shang-Lin
    Xiao, Jun
    Zhang, Haigang
    Wagner, Ryan
    Datar, Adhiraj
    McCarter, Margaret R.
    Serrao, Claudy R.
    Yadav, Ajay K.
    Karbasian, Golnaz
    Hsu, Cheng-Hsiang
    Tan, Ava J.
    Wang, Li-Chen
    Thakare, Vishal
    Zhang, Xiang
    Mehta, Apurva
    Karapetrova, Evguenia
    Chopdekar, Rajesh, V
    Shafer, Padraic
    Arenholz, Elke
    Hu, Chenming
    Proksch, Roger
    Ramesh, Ramamoorthy
    Ciston, Jim
    Salahuddin, Sayeef
    [J]. NATURE, 2020, 580 (7804) : 478 - +
  • [5] Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls
    Choe, Duk-Hyun
    Kim, Sunghyun
    Moon, Taehwan
    Jo, Sanghyun
    Bae, Hagyoul
    Nam, Seung-Geol
    Lee, Yun Seong
    Heo, Jinseong
    [J]. MATERIALS TODAY, 2021, 50 : 8 - 15
  • [6] Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight
    Clima, S.
    Wouters, D. J.
    Adelmann, C.
    Schenk, T.
    Schroeder, U.
    Jurczak, M.
    Pourtois, G.
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (09)
  • [7] Sub 5 Å-EOT HfxZr1-xO2 for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process
    Das, Dipjyoti
    Buyantogtokh, Batzorig
    Gaddam, Venkateswarlu
    Jeon, Sanghun
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (01) : 103 - 108
  • [8] OPTICAL AND PHOTOELECTRIC PROPERTIES AND COLOR CENTERS IN THIN-FILMS OF TUNGSTEN OXIDE
    DEB, SK
    [J]. PHILOSOPHICAL MAGAZINE, 1973, 27 (04): : 801 - 822
  • [9] Fan CC, 2018, 2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018), P280, DOI 10.1109/EDTM.2018.8421478
  • [10] Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors
    Gaddam, Venkateswarlu
    Das, Dipjyoti
    Jeon, Sanghun
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (02) : 745 - 750
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