Stability of the (0001) surface of the Bi2Se3 topological insulator

被引：21

作者：

Tereshchenko, O. E. ^{[1
,2
]}

Kokh, K. A. ^{[3
]}

Atuchin, V. V. ^{[1
]}

Romanyuk, K. N. ^{[1
,2
]}

Makarenko, S. V. ^{[2
]}

Golyashov, V. A. ^{[2
]}

Kozhukhov, A. S. ^{[1
,2
]}

Prosvirin, I. P. ^{[4
]}

Shklyaev, A. A. ^{[1
,2
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

[3] Russian Acad Sci, Siberian Branch, Joint Inst Geol Geophys & Mineral, Novosibirsk 630090, Russia

[4] Russian Acad Sci, Siberian Branch, Boreskov Inst Catalysis, Novosibirsk 630090, Russia

来源：

JETP LETTERS | 2011年 / 94卷 / 06期

关键词：

OXIDATION;

D O I：

10.1134/S0021364011180159

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The inertness of the cleaved (0001) surface of a Bi2Se3 single crystal to oxidation has been demonstrated using X-ray photoelectron spectroscopy, as well as atomic-force and scanning tunneling microscopy and spectroscopy. No intrinsic bismuth and selenium oxides are formed on the surface after a month of storage in air. Atomically flat surfaces with macroscopic sizes (similar to 1 cm(2)) and rms roughness less than 0.1 nm have been prepared, and (1 x 1)-(0001) Bi2Se3 atomic structure has been resolved. The tunneling conductance measurements have shown that the energy dependence of the surface density of states is quasilinear in the band gap of Bi2Se3.

引用

页码：465 / 468

页数：4

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