(Invited) Material Considerations for the Development of III-nitride Power Devices

被引：6

作者：

Sarkar, B. ^{[1
]}

Reddy, P. ^{[1
,2
]}

Kaess, F. ^{[1
]}

Haidet, B. B. ^{[1
]}

Tweedie, J. ^{[1
,2
]}

Mita, S. ^{[1
,2
]}

Kirste, R. ^{[1
,2
]}

Kohn, E. ^{[1
]}

Collazo, R. ^{[1
]}

Sitar, Z. ^{[1
,2
]}

机构：

[1] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] Adroit Mat, 2054 Kildaire Farm Rd,Suite 205, Cary, NC 27518 USA

来源：

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7 | 2017年 / 80卷 / 07期

基金：

美国国家科学基金会;

关键词：

ALN; GAN; GROWTH; HEMTS;

D O I：

10.1149/08007.0029ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

With advancement in growth of native III-nitride substrates, remarkable progress has been made to extend the functionality of GaN based power electronic devices. The low dislocation epitaxial films grown on native substrates outperforms the films grown on foreign substrates. However, several material considerations has to be incorporated in order to exploit the full potential of GaN and AlxGa1-xN (0<x <= 1) based power devices. This paper presents a review report on the development of III-nitride power devices grown on foreign and native (GaN and AlN) substrates. Discussion on state-of-the art epitaxial material quality, contact formation and surface treatments films are presented.

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收藏

页码：29 / 36

页数：8

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