Chemical mechanical polishing and wet cleaning technologies of ruthenium for porous low-k/Cu interconnects

被引：0

作者：

Shiohara, M. ^{[1
]}

Maruyama, K. ^{[1
]}

Abe, M. ^{[1
]}

Imai, M. ^{[1
]}

Namba, K. ^{[1
]}

Tarumi, N. ^{[1
]}

Hara, Y.

Matsumura, K.

Brusic, V.

Thompson, C.

Feeney, P.

Dirksen, J.

Nicholson, K.

Kondo, S. ^{[1
]}

Ogawa, S. ^{[1
]}

Saito, S. ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc, Tsukuba, Ibaraki 3058569, Japan

来源：

ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007) | 2008年 / 23卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We fabricated porous low-k (k=2.6)/Cu interconnects with PVD-Ru barrier metal and Ru/TaN barrier metal films using Ru chemical mechanical polishing and Ru cleaning technologies. A newly developed Ru slurry, which has a removal rate of 34 nm/min for Ru, completely suppressed galvanic corrosion by controlling the electrochemical potential of Ru as well as the surface characteristics of Cu. We also developed a Cl-2 aqueous solution, a new wet chemical for Ru etching of wafer back-side and bevel cleaning to control metal contamination. A Ru etching rate of 30-50 nm/min was obtained. Therefore, these technologies are applicable to the 32-nm node Cu interconnect process.

引用

页码：143 / 149

页数：7