Nonlinear 1/f noise characteristics in luminescent porous silicon

被引:20
作者
Bloom, I [1 ]
Balberg, I
机构
[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
[2] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel
关键词
D O I
10.1063/1.123571
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present noise characteristics of luminescent porous silicon and show that they shed light on the transport mechanism in this system. The 1/f fluctuations show non-Gaussian and nonlinear behavior, and they give a high Hooge factor, typical of disordered conductors. By carrying out the measurements under various bias conditions, we found a bias-dependent redistribution of the percolating current paths. The close resemblance between the present results and those found in granular metals suggests that a tunneling process controlled by the electrostatic energy determines the conduction paths between the nanocrystallites in luminescent porous silicon. (C) 1999 American Institute of Physics. [S0003-6951(99)02410-9].
引用
收藏
页码:1427 / 1429
页数:3
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