Silicon nanowire array photoelectrochemical solar cells

被引:264
作者
Peng, Kuiqing [1 ,2 ,3 ]
Wang, Xin [1 ]
Lee, Shuit-Tong [2 ,3 ,4 ]
机构
[1] Beijing Normal Univ, Dept Mat Sci & Engn, Inst Low Energy Nucl Sci, Beijing 100875, Peoples R China
[2] City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China
[3] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
[4] Chinese Acad Sci, Tech Inst Phys & Chem, Nanoorgan Photoelect Lab, Beijing 100080, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.2909555
中图分类号
O59 [应用物理学];
学科分类号
摘要
Silicon nanowires (SiNWs) arrays prepared by electroless etching show excellent optical antireflectivity over a wide spectral bandwidth from 300 to 1000 nm and surface defect-induced electrical conductivity. Both characteristics make the SiNWs a promising material for photovoltaic cell applications. Photoelectrochemical (PEC) measurements showed the electroless etching SiNWs are remarkably photoactive and effective in enhancing photovoltaic properties including photocurrent and photovoltage. Since electroless etching can enable simple, wafer-scale fabrication of SiNWs without the need of doping. SiNWs array thus prepared show great promise as low-cost and scalable photovoltaic-type PEC materials. (c) 2008 American Institute of Physics.
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页数:3
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