Investigation of the carrier distribution in InGaN-based multi-quantum-well structures

被引：25

作者：

Galler, B. ^{[1
]}

Laubsch, A. ^{[1
]}

Wojcik, A. ^{[1
]}

Lugauer, H. ^{[1
]}

Gomez-Iglesias, A. ^{[1
]}

Sabathil, M. ^{[1
]}

Hahn, B. ^{[1
]}

机构：

[1] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 | 2011年 / 8卷 / 7-8期

关键词：

InGaN; MQW; LED; transport; EFFICIENCY;

D O I：

10.1002/pssc.201001075

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate colour-coded InGaN-based light-emitting diodes (LEDs) where the position of a cyan-emitting quantum well (QW) embedded into a blue-emitting active region was varied systematically. The intensity ratio between the light output originating from the cyan and the blue QWs for different temperatures is analyzed both under electroluminescence (EL) and photoluminescence (PL) conditions. In EL, the contribution of the cyan QW increases when its position draws nearer to the p-side. Surprisingly, a similar behaviour is also observed under PL excitation. Clear evidence of limited multi-quantum-well (MQW) operation at room temperature is found by comparing the relative emission intensities for different temperatures. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2372 / 2374

页数：3

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