Direct observation of Al-doping-induced electronic states in the valence band and band gap of ZnO films

被引：19

作者：

Gabas, Mercedes ^{[1
]}

Torelli, Piero ^{[2
]}

Barrett, Nicholas T. ^{[3
]}

Sacchi, Maurizio ^{[4
,5
]}

Bruneval, Fabien ^{[6
]}

Cui, Ying ^{[6
]}

Simonelli, Laura ^{[7
]}

Diaz-Carrasco, Pilar ^{[1
]}

Ramos Barrado, Jose R. ^{[1
]}

机构：

[1] Univ Malaga, Dpto Fis Aplicada 1, Lab Mat & Superficies, E-29071 Malaga, Spain

[2] IOM CNR, Lab TASC, I-34149 Trieste, Italy

[3] CEA, IRAMIS SPCSI LENSIS, F-91191 Gif Sur Yvette, France

[4] Synchrotron SOLEIL, F-91192 Gif Sur Yvette, France

[5] Univ Paris 06, Lab Chim Phys Mat & Rayonnement, CNRS UMR7614, F-75005 Paris, France

[6] CEA, DEN, Serv Rech Met Phys, F-91191 Gif Sur Yvette, France

[7] European Synchrotron Radiat Facil, F-38042 Grenoble, France

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 15期

关键词：

THIN-FILMS; DOPED ZNO;

D O I：

10.1103/PhysRevB.84.153303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a synchrotron radiation hard x-ray photoemission spectroscopy study of the electronic structure of Al-doped ZnO films. Doping-induced states appear between the Zn3d and O2p levels and in the band gap just below the conduction band minimum (CBM). Ab initio calculations confirm the Al impurity origin of these induced states. The drop in the film resistivity with Al doping is not due to the progressive shifting of the Fermi level above the CBM, but rather to the filling of the Al impurity band state, which pins the Fermi level just below the CBM.

引用

页数：4

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