A detailed analysis of current-voltage characteristics of Au/perylene-monoimide/n-Si Schottky barrier diodes over a wide temperature range

被引：54
作者：
Yuksel, O. F. [1 ]
Kus, M. [2 ,3 ]
Simsir, N. [1 ]
Safak, H. [1 ]
Sahin, M. [1 ]
Yenel, E. [2 ,3 ]
机构：
[1] Selcuk Univ Campus, Fac Sci, Dept Phys, TR-42075 Konya, Turkey
[2] Selcuk Univ Campus, Dept Chem Engn, TR-42075 Konya, Turkey
[3] Selcuk Univ Campus, Adv Technol Res & Applicat Ctr, TR-42075 Konya, Turkey
来源：
JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 02期
关键词：
POLYANILINE/P-SI/AL STRUCTURE; ELECTROCHEMICAL CHARACTERIZATION; PERYLENE DERIVATIVES; THIN-FILMS; INTERFACE; PARAMETERS; CONDUCTION; PERFORMANCE; EXTRACTION; DYE;
D O I：
10.1063/1.3610394
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The current-voltage characteristics of Au/perylene-monoimide (PMI)/n-Si Schottky device have been investigated at a wide temperature range between 75 and 300 K in detail. The measured current-voltage (I-V) characteristics of the device show a good rectification behavior at all temperatures. The electronic parameters such as the ideality factor and the barrier height are determined from the experimental data using standard current-voltage analysis method and also temperature dependence of these parameters is analyzed. In addition to the standard analysis, using the Cheung and Cheung method, the series resistance and some other electrical properties are calculated for the device, and a good agreement is obtained between relevant diode parameters. It was observed that Au/PMI/n-Si Schottky diodes exhibit space charge limited (SCL) conduction at all temperatures. Therefore, we have analyzed this SCL current mechanism in more detail. From this analysis, several electronic parameters related with the SCL mechanism are determined, and it is found that Poole-Frenkel effect is dominant in reverse bias. (C) 2011 American Institute of Physics. [doi:10.1063/1.3610394]
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页数：7
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