AlInGaN-based superlattice p-region for improvement of performance of deep UV LEDs

被引：25
作者：
Mondal, Ramit Kumar [1 ,2 ]
Chatterjee, Vijay [1 ,2 ]
Pal, Suchandan [1 ,2 ]
机构：
[1] CSIR CEERI, Optoelect & MOEMS Grp, Pilani 333031, Rajasthan, India
[2] CSIR, Acad Sci & Innovat Res, Cent Elect Engn Res Inst Campus, Pilani 333031, Rajasthan, India
来源：
OPTICAL MATERIALS | 2020年 / 104卷
关键词：
Superlattice-AlInGaN; Strain compensation; Efficiency droop; DUV LED; LIGHT-EMITTING-DIODES; QUANTUM-WELL; ALGAN; POLARIZATION; LAYER; OPTIMIZATION; PARAMETERS; OPERATION; CONTACT; GAP;
D O I：
10.1016/j.optmat.2020.109846
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A deep ultraviolet light-emitting diode (DUV LED) consisting of a specifically designed intermediate p-type region involving a superlattice quaternary nitride alloy has been proposed. The light output power of the proposed structure has been found significantly large; around 28.30 times high in comparison to the conventional structure, at the current density of 200 A/cm(2). The maximum internal quantum efficiency of the proposed structure is 153.63% higher compared to the conventional one. Moreover, the efficiency droop has been reduced by 99.08%. Absence of abrupt potential barrier owing to the strain compensation provided by the superlattice p-AlInGaN layer offers an attractive solution for enhancing the hole injection into the active region leading to the improvement in performance of DUV LED.
引用
收藏
页数：6
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