Ferromagnetism and Bound Magnetic Polaron Behavior in (In1-xCox)2O3

被引：23

作者：

Bora, Tribedi ^{[1
]}

Samantaray, B. ^{[1
]}

Mohanty, S. ^{[1
]}

Ravi, S. ^{[1
]}

机构：

[1] Indian Inst Technol Guwahati, Dept Phys, Gauhati 781039, India

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2011年 / 47卷 / 10期

关键词：

Indium compounds; magnetic semiconductors; ROOM-TEMPERATURE FERROMAGNETISM; IN2O3; SPINTRONICS; FUTURE;

D O I：

10.1109/TMAG.2011.2157660

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bulk samples of (In1-xCox)(2)O-3 were prepared in single phase form for x = 0.02 and 0.07. The samples are found to be free from impurities such as Co3O4 and other cobalt oxides as per the detailed micro structural and Raman spectroscopic analysis. Temperature variation of magnetization upto 900 K for 0.3 T magnetic field and field variation of magnetization at different temperatures down to 20 K were measured. Both the samples are found to exhibit clear room temperature ferromagnetism. The increase in spontaneous magnetization, remanent magnetization and coercive field with decrease in temperature is explained in terms of magnetic anisotropy. The initial magnetization data could be fitted to the bound magnetic polaron model. A clear paramagnetic to ferromagnetic transition with T-C approximate to 718 K was observed. The Curie-Weiss law fit conform the ferromagnetic transition with effective magnetic moment value of 1.5 mu(B).

引用

页码：3991 / 3994

页数：4