Lead-free ferroelectric BaTiO3 doped-(Na0.5Bi0.5)TiO3 thin films processed by pulsed laser deposition technique

被引:27
作者
Dragoi, Cristina [1 ,2 ]
Cernea, Marin [1 ]
Trupina, Lucian [1 ]
机构
[1] Natl Inst Mat Phys, Bucharest 077125, Romania
[2] Univ Bucharest, Fac Phys, Bucharest 077125, Romania
关键词
Lead-free ferroelectrics; Thin films; Pulsed laser deposition; Dielectric and piezoelectric properties; TITANATE NA1/2BI1/2TIO3-BATIO3 CERAMICS; TEMPLATED GRAIN-GROWTH; PIEZOELECTRIC PROPERTIES; ELECTRICAL-PROPERTIES; DOMAIN-STRUCTURES;
D O I
10.1016/j.apsusc.2011.06.075
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The difficulties in synthesizing phase pure BaTiO3 doped-(Na0.5Bi0.5)TiO3 are known. In this work, we reporting the optimized pulsed laser deposition (PLD) conditions for obtaining pure phase 0.92(Na0.5Bi0.5)TiO3-0.08BaTiO(3), (BNT-BT0.08), thin films. Dielectric, ferroelectric and piezoelectric properties of BNT-BT0.08, thin films deposited by PLD on Pt/TiO2/SiO2/Si substrates are investigated in this paper. Perovskite structure of BNT-BT0.08 thin films with random orientation of nanocrystallites has been obtained by deposition at 600 degrees C. The relative dielectric constant and loss tangent at 100 kHz, of BNT-BT0.08 thin film with 530 nm thickness, were 820 and 0.13, respectively. Ferroelectric hysteresis measurements indicated a remnant polarization value of 22 mu C/cm(2) and a coercive field of 120 kV/cm. The piezoresponse force microscopy (PFM) data showed that most of the grains seem to be constituted of single ferroelectric domain. The as-deposited BNT-BT0.08 thin film is ferroelectric at the nanoscale level and piezoelectric. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:9600 / 9605
页数:6
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