Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers

被引：25

作者：

Cao, Q. ^{[1
]}

Yoon, S. F. ^{[1
]}

Liu, C. Y. ^{[1
]}

Ngo, C. Y. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

NANOSCALE RESEARCH LETTERS | 2007年 / 2卷 / 06期

关键词：

molecular beam epitaxy; single lateral mode; InAs/InGaAs quantum dot; pulsed anodic oxidation; laser diode;

D O I：

10.1007/s11671-007-9066-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ten-layer InAs/In0.15Ga0.85As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 mu m) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the InAs QD laser (2 x 2,000 mu m(2)) delivered total output power of up to 272.6 mW at 10 degrees C at 1.3 mu m. Under pulsed operation, where the device heating is greatly minimized, the InAs QD laser (2 x 2,000 mu m(2)) delivered extremely high output power (both facets) of up to 1.22 W at 20 degrees C, at high external differential quantum efficiency of 96%. Far field pattern measurement of the 2-mu m RWG InAs QD lasers showed single lateral mode operation.

引用

页码：303 / 307

页数：5

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