Selectivity in high-temperature operated semiconductor gas-sensors

被引:91
作者
Fleischer, M [1 ]
Meixner, H [1 ]
机构
[1] Siemens AG, Corp Res & Dev, Dept ZT KM 2, D-81739 Munich, Germany
关键词
gas sensor; semiconducting metal oxides; high temperature; Ga2O3; selectivity; gas filters; thin films; thick films;
D O I
10.1016/S0925-4005(98)00271-8
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
High-temperature operated metal oxides like Ga2O3 developed in the last years show certain advantages like reproducibility and robustness resulting from a conduction mechanism which is independent on grain boundary effects. But similar to the lower temperature operated oxides like SnO2 and ZnO they also possess broad band sensitivity characteristics, i.e. they respond to all gases with similar chemical properties. This paper shows to which extent strategies to achieve selective gas detection with one single sensor are applicable with these metal oxides. Temperature variations, surface modifications and the use of physical and chemical filters directly attached to the sensor surface are discussed in this paper. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:179 / 187
页数:9
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