Convective interaction and instabilities in GaAs Czochralski model

被引：21

作者：

Polezhaev, VI ^{[1
]}

Bessonov, OA ^{[1
]}

Nikitin, NV ^{[1
]}

Nikitin, SA ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Problems Mech, Lab Math & Phys Modeling Fluid Dynam, Moscow 117526, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 230卷 / 1-2期

关键词：

computer simulation; convection; heat transfer; instabilities; Czochralski method; gallium compounds;

D O I：

10.1016/S0022-0248(01)01317-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Instability and temperature oscillations in the melt for idealized Czochralski model for typical parameters of the semiisolating GaAs crystal growth configuration are studied. Critical Gr and Re numbers are determined using linear stability analysis and direct numerical simulation. The impact of the height of the melt on convection structure and critical Gr number are studied. Microgravity alternatives for damping of the temperature oscillations are discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：40 / 47

页数：8

共 27 条

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