Spin-dependent tunneling in HfO2 tunnel junctions

被引：98
|
作者：
Platt, CL
Dieny, B
Berkowitz, AE
机构：
[1] UNIV CALIF SAN DIEGO,CTR MAGNET RECORDING RES,LA JOLLA,CA 92093
[2] CEA,DEPT RECH FONDAMENTALE MAT CONDENSEE,SP2M,NM,F-38054 GRENOBLE 9,FRANCE
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 15期
关键词：
D O I：
10.1063/1.117537
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We identified reactively sputtered HfO2 as a particularly good material for making thin insulating barriers for spin-dependent tunnel junctions. This material allows one to form pinhole-free tunnel barriers with good transmission of the spin polarization of the tunneling electrons. Magnetic tunnel junctions consisting of a thin layer of HfO2 sandwiched between transition metal electrodes (Co and Fe, for instance) exhibit changes of tunnel resistance up to 30% at low temperature as a function of applied field. This effect can be used in a variety of magnetic field sensing applications or in magnetic random access memory. (C) 1996 American Institute of Physics.
引用
收藏
页码：2291 / 2293
页数：3
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