On ev and ve-Degree Based Topological Indices of Silicon Carbides

被引：18

作者：

Lee, Jung Rye ^{[1
]}

Hussain, Aftab ^{[2
]}

Fahad, Asfand ^{[3
]}

Raza, Ali ^{[3
]}

Qureshi, Muhammad Imran ^{[3
]}

Mahboob, Abid ^{[4
]}

Park, Choonkil ^{[5
]}

机构：

[1] Daejin Univ, Dept Data Sci, Kyunggi 11159, South Korea

[2] King Abdulaziz Univ, Dept Math, Jeddah 21589, Saudi Arabia

[3] COMSATS Univ Islamabad, Dept Math, Vehari 61110, Pakistan

[4] Univ Educ, Dept Math, Div Sci & Technol, Lahore, Pakistan

[5] Hanyang Univ, Res Inst Nat Sci, Seoul 04763, South Korea

来源：

CMES-COMPUTER MODELING IN ENGINEERING & SCIENCES | 2022年 / 130卷 / 02期

关键词：

Topological indices; silicon carbide; ev-degree; ve-degree; DESCRIPTORS;

D O I：

10.32604/cmes.2022.016836

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In quantitative structure-property relationship (QSPR) and quantitative structure-activity relationship (QSAR) studies, computation of topological indices is a vital tool to predict biochemical and physio-chemical properties of chemical structures. Numerous topological indices have been inaugurated to describe different topological features. The ev and ve-degree are recently introduced novelties, having stronger prediction ability. In this article, we derive formulae of the ev-degree and ve-degree based topological indices for chemical structure of Si2C3 - I[a,b].

引用

页码：871 / 885

页数：15

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