Investigation of yellow luminescence intensity of N-polar unintentionally doped GaN

被引：5

作者：

Du Da-Chao ^{[1
]}

Zhang Jin-Cheng ^{[1
]}

Ou Xin-Xiu ^{[1
]}

Wang Hao ^{[1
]}

Chen Ke ^{[1
]}

Xue Jun-Shuai ^{[1
]}

Xu Sheng-Rui ^{[1
]}

Hao Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond & Devices, Xian 710071, Peoples R China

来源：

CHINESE PHYSICS B | 2011年 / 20卷 / 03期

基金：

中国国家自然科学基金;

关键词：

N-polar GaN; yellow luminescence; KOH etching; CHEMICAL-VAPOR-DEPOSITION; C-PLANE SAPPHIRE; GALLIUM VACANCIES; EPITAXY; FACE; SUBSTRATE; GROWTH; FILMS;

D O I：

10.1088/1674-1056/20/3/037805

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper reports that the yellow luminescence intensity of N-polar GaN Epi-layers is much lower than that of Ga-polar ones due to the inverse polarity, and reduces drastically in the N-polar unintentionally-doped GaN after etching in KOH solution. The ratio of yellow luminescence intensity to band-edge emission intensity decreases sharply with the etching time. The full width at half maximum of x-ray diffraction of (10-12) plane falls sharply after etching, and the surface morphology characterized by scanning electron microscope shows a rough surface that changes with the etching time. The mechanism for the generation of the yellow luminescence are explained in details.

引用

页数：5

共 19 条

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