Edge effects in second-harmonic generation in nanoscale layers of transition-metal dichalcogenides

被引：8
|
作者：
Mishina, E. D. [1 ]
Sherstyuk, N. E. [1 ]
Shestakova, A. P. [1 ]
Lavrov, S. D. [1 ]
Semin, S. V. [1 ,3 ]
Sigov, A. S. [1 ]
Mitioglu, A. [2 ,4 ]
Anghel, S. [2 ,5 ]
Kulyuk, L. [2 ]
机构：
[1] Moscow State Tech Univ Radio Engn Elect & Automat, Pr Vernadskogo 78, Moscow 119454, Russia
[2] Moldavian Acad Sci, Inst Appl Phys, MD-2028 Kishinev, Moldova
[3] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6500 ED Nijmegen, Netherlands
[4] Lab Natl Champs Magnet Intenses, F-31400 Toulouse, France
[5] Ruhr Univ Bochum, Anorgan Chem 3, D-44801 Bochum, Germany
来源：
SEMICONDUCTORS | 2015年 / 49卷 / 06期
关键词：
ELECTRONIC-PROPERTIES; MOS2; PHOTOLUMINESCENCE;
D O I：
10.1134/S1063782615060159
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The results of studying the optical properties of nanoscale single crystals of MoS2:Cl-2 and WS2:Br-2 semiconductor compounds are presented. In microscopic images obtained at the wavelength of the second (400 nm), edge effects are detected, which consist in enhancement or reduction in the second-harmonic signal intensity. Unlike previously proposed interference mechanisms of edge effects, non-interference mechanisms are considered. The occurrence of edge effects is associated with either an increased Cl-2 and Br-2 halogen molecule concentration or with an electrically induced second harmonic caused by band bending at the edges of individual crystal layers.
引用
收藏
页码：791 / 796
页数：6
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