Edge effects in second-harmonic generation in nanoscale layers of transition-metal dichalcogenides

被引：8

作者：

Mishina, E. D. ^{[1
]}

Sherstyuk, N. E. ^{[1
]}

Shestakova, A. P. ^{[1
]}

Lavrov, S. D. ^{[1
]}

Semin, S. V. ^{[1
,3
]}

Sigov, A. S. ^{[1
]}

Mitioglu, A. ^{[2
,4
]}

Anghel, S. ^{[2
,5
]}

Kulyuk, L. ^{[2
]}

机构：

[1] Moscow State Tech Univ Radio Engn Elect & Automat, Pr Vernadskogo 78, Moscow 119454, Russia

[2] Moldavian Acad Sci, Inst Appl Phys, MD-2028 Kishinev, Moldova

[3] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6500 ED Nijmegen, Netherlands

[4] Lab Natl Champs Magnet Intenses, F-31400 Toulouse, France

[5] Ruhr Univ Bochum, Anorgan Chem 3, D-44801 Bochum, Germany

来源：

SEMICONDUCTORS | 2015年 / 49卷 / 06期

关键词：

ELECTRONIC-PROPERTIES; MOS2; PHOTOLUMINESCENCE;

D O I：

10.1134/S1063782615060159

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of studying the optical properties of nanoscale single crystals of MoS2:Cl-2 and WS2:Br-2 semiconductor compounds are presented. In microscopic images obtained at the wavelength of the second (400 nm), edge effects are detected, which consist in enhancement or reduction in the second-harmonic signal intensity. Unlike previously proposed interference mechanisms of edge effects, non-interference mechanisms are considered. The occurrence of edge effects is associated with either an increased Cl-2 and Br-2 halogen molecule concentration or with an electrically induced second harmonic caused by band bending at the edges of individual crystal layers.

引用

页码：791 / 796

页数：6

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