A Study of Vapor-Phase Deposition of Silicon Nitride Layers by Ammonolysis of Dichlorosilane at Lowered Pressure

被引：0
|
作者：
Manzha, N. M. [1 ]
机构：
[1] Technol Ctr Res & Prod Co, Moscow Inst Elect Technol, Moscow, Russia
来源：
SEMICONDUCTORS | 2010年 / 44卷 / 13期
关键词：
Silicon Nitride; Apparent Activation Energy; Bimolecular Reaction; Deposition Zone; Monosilane;
D O I：
10.1134/S1063782610130051
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Deposition kinetics of silicon nitride layers at lowered reactor pressures of 10-130 Pa and temperatures in the range 973 1073 K has been studied. The equilibrium constant of the bimolecular reaction of dichlorosilane with ammonia has been calculated. The apparent activation energies calculated taking into account the experimental growth rate nearly coincide with the experimental data. Recommendations for improving the quality of silicon nitride layers are made.
引用
收藏
页码：1644 / 1648
页数：5
相关论文
共 50 条
  • [21] Diamond coating on silicon nitride by intermittent discharge DC plasma chemical vapor deposition
    Araki, T
    Noda, M
    Katsuyama, T
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 48 (03): : 221 - 225
  • [22] Optical properties of silicon nitride films formed by plasma-chemical vapor deposition
    Vlasukova, L. A.
    Komarov, F. F.
    Parkhomenko, I. N.
    Milchanin, O. V.
    Leont'ev, A. V.
    Mudryi, A. V.
    Togambaeva, A. K.
    JOURNAL OF APPLIED SPECTROSCOPY, 2013, 80 (01) : 89 - 92
  • [23] Chemical vapor deposition of silicon nitride thin films from tris(diethylamino)chlorosilane
    Liu, XJ
    Pu, XP
    Li, HL
    Qiu, FG
    Huang, LP
    MATERIALS LETTERS, 2005, 59 (01) : 11 - 14
  • [24] Optical properties of silicon nitride films formed by plasma-chemical vapor deposition
    L. A. Vlasukova
    F. F. Komarov
    I. N. Parkhomenko
    O. V. Milchanin
    A. V. Leont’ev
    A. V. Mudryi
    A. K. Togambaeva
    Journal of Applied Spectroscopy, 2013, 80 : 89 - 92
  • [25] Silicon nitride at high deposition rate by Hot Wire Chemical Vapor Deposition as passivating and antireflection layer on multi crystalline silicon solar cells
    van der Werf, CHM
    Goldbach, HD
    Löffler, J
    Scarfó, A
    Kylner, AMC
    Stannowski, B
    ArnoldBik, WM
    Weeber, A
    Rieffe, H
    Soppe, WJ
    Rath, JK
    Schropp, REI
    THIN SOLID FILMS, 2006, 501 (1-2) : 51 - 54
  • [26] Various applications of silicon nitride by catalytic chemical vapor deposition for coating, passivation and insulating films
    Masuda, A
    Umemoto, H
    Matsumura, H
    THIN SOLID FILMS, 2006, 501 (1-2) : 149 - 153
  • [27] Characterization of low pressure chemically vapor deposited silicon nitride using experimental design
    Gregory, J.A., 1600, (206): : 1 - 2
  • [28] Thermodynamic study on the chemical vapor deposition of silicon nitride from the SiCl4-NH3-H2 system
    Ren, Haitao
    Zhang, Litong
    Su, Kehe
    Zeng, Qingfeng
    Cheng, Laifei
    COMPUTATIONAL AND THEORETICAL CHEMISTRY, 2015, 1051 : 93 - 103
  • [29] Charge Storage Characteristics of Silicon Nanoclusters in Silicon Nitride Matrix Grown by Laser Assisted Chemical Vapor Deposition Method
    Tsai, Tai-Cheng
    Lou, Li-Ren
    Lee, Ching-Ting
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (08) : 6837 - 6842
  • [30] Optimization of reaction parameters for synthesis of amorphous silicon nitride powder by vapor phase reaction
    Chung, Yong Kwon
    Koo, Jae Hong
    Kim, Shin A.
    Chi, Eun Ok
    Hahn, Jee Hyun
    Park, Chan
    CERAMICS INTERNATIONAL, 2014, 40 (09) : 14563 - 14568
12345