Origin of the excellent thermal stability of Al/Si-based ohmic contacts to p-type LPE 4H-SiC

被引：2

作者：

Kassamakova, L

Kakanakov, R

Kassamakov, I

Zekentes, K

Tsagaraki, K

Atanasova, G

机构：

[1] Bulgarian Acad Sci, Inst Phys Appl, BG-4000 Plovdiv, Bulgaria

[2] Fdn Res & Technol Hellas, Inst Elect Struct & Laser, Microelect Res Grp, GR-71110 Iraklion, Crete, Greece

[3] Bulgarian Acad Sci, Inst Gen & Inorgan Chem, BG-1113 Sofia, Bulgaria

来源：

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷

关键词：

AFM; ohmic contacts; thermal stability; transmission line model (TLM); XPS;

D O I：

10.4028/www.scientific.net/MSF.353-356.251

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Two types of ohmic contacts, namely AlSiTi and Al/Si, have been formed on p-type 4H-SiC grown by LPE. An increase of the optimum annealing temperature was observed for the contacts containing titanium. The lowest resistivity of 9.5x10(-5) Omega .cm(2) of AlSiTi/SiC contacts was achieved after annealing at 950 degreesC and a value of 2.5x10(-4) Omega .cm(2) was measured for Al/SiSiC contacts annealed at 700 degreesC. It was found that AlSiTi contacts were stable during aging at 600 degreesC for 100 h while Al/Si contacts deteriorated after 48 h heating. This result can be ascribed to the formation of a stable Al(4)C(3) compound in the AlSiTi/SiC contacts annealed at 950 degreesC.

引用

页码：251 / 254

页数：4

共 7 条

[1]

Crofton J, 1997, PHYS STATUS SOLIDI B, V202, P581, DOI 10.1002/1521-3951(199707)202:1<581::AID-PSSB581>3.0.CO

[2]

2-M

[3]

KAKANAKOV R, IN PRESS MAT SCI ENG

[4] Al/Si ohmic contacts to p-type 4H-SiC for power devices [J].

Kassamakova, L ;

Kakanakov, R ;

Kassamakov, I ;

Nordell, N ;

Savage, S ;

Svedberg, EB ;

Madsen, LD .

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :1009-1012

[5] High temperature 4H-SiC FET for gas sensing applications [J].

Savage, SM ;

Konstantinov, A ;

Saroukhan, AM ;

Harris, CI .

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :1431-1434

[6] High temperature gas sensors based on catalytic metal field effect transistors [J].

Svenningstorp, H ;

Unéus, L ;

Tobias, P ;

Lundström, I ;

Ekedahl, LG ;

Spetz, AL .

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :1435-1438

[7] SCHOTTKY-BARRIER HEIGHT AND INTERFACE CHEMISTRY OF ANNEALED METAL CONTACTS TO ALPHA-6H-SIC - CRYSTAL-FACE DEPENDENCE [J].

WALDROP, JR ;

GRANT, RW .

APPLIED PHYSICS LETTERS, 1993, 62 (21) :2685-2687

← 1 →