Nonlinear thermal characteristics of silicon carbide devices

被引：11

作者：

Janke, Wlodzimierz ^{[1
]}

Hapka, Aneta ^{[1
]}

机构：

[1] Tech Univ Koszalin, Dept Elect & Comp Sci, PL-75453 Koszalin, Poland

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2011年 / 176卷 / 04期

关键词：

Silicon carbide; Schottky diodes; Thermal transients;

D O I：

10.1016/j.mseb.2010.06.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the paper, the dynamic nonlinear model of SiC devices is proposed, where the dependencies of the thermal parameters on the temperature are included. The proposed model is applicable and useful in the simulations of electro-thermal transients in the devices working with high power density and in the wide range of temperature. (C) 2010 Elsevier By. All rights reserved.

引用

页码：289 / 292

页数：4

共 9 条

[1]

*CREE, CREE PROD DOC

[2]

FENG LH, 2001, 6 INT C THERM MECH M, P372

[3]

JANKE W, 2009, 8 INT C MICR THERM P, P145

[4]

Janke W, 1992, THERMAL EFFECTS SEMI

[5]

KOJIMA T, 2006, 37 IEEE POW EL SPEC, P2048

[6]

Nilsson O., 1997, High Temperatures - High Pressures, V29, P73, DOI 10.1068/htec142

[7]

Pyo S., 2009, 2009 IEEE 6th International Power Electronics and Motion Control Conference, P269, DOI 10.1109/IPEMC.2009.5157397

[8] Studies on the nonlinearity effects in dynamic compact model generation of packages [J].

Rencz, M ;

Székely, V .

IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2004, 27 (01) :124-130

[9] Maximum Junction Temperatures of SiC Power Devices [J].

Sheng, Kuang .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (02) :337-342

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