Preparation and characterization of the rod-shaped stibnite

被引：4

作者：

Ouni, B. ^{[1
]}

Zouini, M. ^{[2
]}

Lakhdar, M. Haj ^{[1
]}

Larbi, T. ^{[1
]}

Dimassi, W. ^{[2
]}

Amlouk, M. ^{[1
]}

机构：

[1] Tunis El Manar Univ, Fac Sci Tunis, Unite Phys Dispositifs Semicond, Tunis 2092, Tunisia

[2] Ctr Rech & Technol Energie, Lab Photovolta, Hammam Lif 2050, Tunisia

来源：

MATERIALS RESEARCH BULLETIN | 2015年 / 67卷

关键词：

Nanostructures; Optical properties; Raman spectroscopy; Defects; Electrical properties; OPTICAL-PROPERTIES; SB2S3; STATES; NANOSTRUCTURES; MECHANISM; GROWTH;

D O I：

10.1016/j.materresbull.2015.03.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Stibnite (Sb2S3) micro-wires have been grown on glass substrates by sulfuration of Sb thermal evaporated film in a vacuum sealed tube in presence of sulfur powder at 300 degrees C for 6 h. X-ray diffraction and Raman spectroscopy techniques indicate that the synthesized micro-wires have an orthorhombic structure. SEM micrographs show rod-shaped micro-wires with a typical length of several tens of micrometers and a diameter of the order of 0.5 mu m. The absorption coefficient dependence on the photon energy in the UV-visible range revealed the existence of a direct transition with an energy band gap of about 1.7 eV. Moreover, the band tails and localized states which are related to the level of defects in the material will be presented. These parameters were determined from the exponential absorption profile. All these results have been evaluated and discussed in terms of alteration of band gap edge and electrical measurements. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：191 / 195

页数：5