A phosphine detection matrix using nanostructure modified porous silicon gas sensors

被引:57
作者
Ozdemir, Serdar [1 ]
Gole, James L. [1 ,2 ]
机构
[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Sch Mech Engn, Atlanta, GA 30332 USA
基金
美国国家科学基金会;
关键词
Gas sensor; Porous silicon; Metal oxide nanostructures; Phosphine dete ction; INTERFACES; COPPER; FILMS;
D O I
10.1016/j.snb.2010.08.016
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
We discuss the selective modification of porous silicon (PS) conductometric gas sensors for phosphine detection. Tin, nickel, copper and gold are electrolessly deposited onto nanopore covered microporous porous silicon surfaces forming SnOx, NiO, CuxO and AuxO nanostructured centers. Further studies have also been carried out with nanostructured alumina coated porous silicon. The porous silicon surface is analyzed for the metal oxides considered using XPS measurements. These experiments demonstrate that the indicated metals are deposited to the nanopore covered micropores of the PS interface and are oxidized to form metal oxide sites. The sensitivity change of these modified porous silicon gas sensor surfaces has been measured under 1-5 ppm PH3 exposure. An improved sensitivity, of the order of 5 times that of untreated porous silicon, for 1 ppm exposure is observed. The selection of the nanostructure deposition is based on the hard to soft acid character of the nanostructured deposit and its subsequent effect on the physisorption of PH3, an intermediate base. The observed behavior follows an inverse pattern IHSAB to the hard soft acid-base concept. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:274 / 280
页数:7
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