Comment on "Structural analysis of the SiO2/Si(100) interface by means of photoelectron diffraction" -: art. no. 189601

被引：5

作者：

Bongiorno, A

Pasquarello, A

机构：

[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[2] Ecole Polytech Fed Lausanne, Inst Theoret Phys, CH-1015 Lausanne, Switzerland

[3] PHB Ecublens, Inst Romand Rech Numer Phys Mat, CH-1015 Lausanne, Switzerland

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 94卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.94.189601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A Comment on the Letter by S. Dreiner, M. Schürmann, and C. Westphal Phys. Rev. Lett. 93, 126101 (2004).PRLTAO0031-900710.1103/PhysRevLett.93.126101 The authors of the Letter offer a Reply. © 2005 The American Physical Society.

引用

页数：1

共 10 条

[1] Transition structure at the Si(100)-SiO2 interface -: art. no. 186101
Bongiorno, A
Pasquarello, A
Hybertsen, MS
Feldman, LC
[J]. PHYSICAL REVIEW LETTERS, 2003, 90 (18) : 4
[2] Atomistic structure of the Si(100)-SiO2 interface:: A synthesis of experimental data
Bongiorno, A
Pasquarello, A
[J]. APPLIED PHYSICS LETTERS, 2003, 83 (07) : 1417 - 1419
[3] Structural analysis of the SiO2/Si(100) interface by means of photoelectron diffraction -: art. no. 126101
Dreiner, S
Schürmann, M
Westphal, C
[J]. PHYSICAL REVIEW LETTERS, 2004, 93 (12) : 126101 - 1
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[8] SI 2P CORE-LEVEL SHIFTS AT THE SI(001) SIO2 INTERFACE - A FIRST-PRINCIPLES STUDY
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[9] Frequency-dependent electron spin resonance study of Pb-type interface defects in thermal Si/SiO2 -: art. no. 165320
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[J]. PHYSICAL REVIEW B, 2002, 66 (16) : 1 - 9
[10] Structure and energetics of the Si-SiO2 interface
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[J]. PHYSICAL REVIEW LETTERS, 2000, 84 (19) : 4393 - 4396

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