The growth of III-V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy

被引：19

作者：

Beh, K. P. ^{[1
]}

Yam, F. K. ^{[1
]}

Chin, C. W. ^{[1
]}

Tneh, S. S. ^{[1
]}

Hassan, Z. ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, George Town, Malaysia

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 506卷 / 01期

关键词：

InGaN; SEM; PL; XRD; High work function metal contacts; GALLIUM NITRIDE; GAN; INGAN; MBE; FILMS; EMISSION; SILICON; SI(111); LAYERS;

D O I：

10.1016/j.jallcom.2010.06.204

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper reports the growth of InGaN/GaN/AlN epitaxial layer on Si(1 1 1) substrate by utilizing plasma-assisted molecular beam epitaxy (PA-MBE) system. The as-grown film was characterized using high-resolution X-ray diffraction (HR-XRD) and photoluminescence (PL). High work function metals, iridium and gold were deposited on the film as metal contacts and their electrical characteristics at pre- and post-annealing were studied. The structural quality of this film is comparative to the values reported in the literature, and the indium molar fraction is 0.57 by employing Vegard's law. The relatively low yellow band emission signifies the grown film is of high quality. For metal contact studies it was found that the post-annealed sample for 5 min shows good conductivity as compared to the other samples. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：343 / 346

页数：4

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