Study on the properties of Pb(Zr,Ti)O3 thin films grown alternately by pulsed laser deposition and sol-gel method

被引：6

作者：

Shi, Peng ^{[1
]}

Yang, Yan ^{[1
]}

Li, Huisen ^{[1
]}

Zou, Zhiqiu ^{[1
]}

Zhu, Benpeng ^{[1
]}

Zhang, Yue ^{[1
]}

Ou-Yang, Jun ^{[1
]}

Chen, Shi ^{[1
]}

Yang, Xiaofei ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China

来源：

PHYSICS LETTERS A | 2020年 / 384卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Lead zirconate titanate; Sol-gel; PLD; ELECTRICAL-PROPERTIES; PZT;

D O I：

10.1016/j.physleta.2019.126232

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In order to prepare good quality Pb(Zr,Ti)O-3 (PZT) thin films, we consider the method of alternately growing PZT thin films on Pt (111)/Ti/SiO2/Si (100) substrates by pulsed laser deposition (PLD) and solgel. In this work, we conducted comparative experiments on different film preparation methods, and 1.0 um thick PZT film was grown on platinized silicon wafers by an alternate PLD and sol-gel method. The microstructure and electrical properties of the films is analyzed. Through the study of X-ray diffraction, SEM, AFM, PFM, and ferroelectric testing, it is found that the alternating growth of a film by the alternate PLD and sol-gel method has good compactness, excellent ferroelectric properties, and smaller leakage current compared to film prepared by the sol-gel method alone. (C) 2020 Elsevier B.V. All rights reserved.

引用

页数：6

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