Experimental study to validate a model of hillock's formation in aluminum thin films

被引：21
|
作者：
Genin, FY
Siekhaus, WJ
机构：
[1] Chemistry and Materials Science, Lawrence Livermore Natl. Laboratory, Livermore
来源：
JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 07期
关键词：
D O I：
10.1063/1.361408
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The growth of holes and hillocks in thin films has been reported extensively and for a multitude of film-substrate systems. A recently developed model [F. Y. Genin, J. Appl. Phys. 77, 5130 (1995)] which analyzes the formation of a ridge at a traveling grain boundary due to stress and capillarity driving forces provides a quantitative description of the growth of the hillocks. In order to test the model, the surface morphology of aluminum thin films deposited on oxidized silicon substrates and annealed at 450 degrees C in argon is investigated; the profiles of thermal hillocks are measured by atomic force microscopy. The comparison shows excellent agreement between modeled and experimental profiles.
引用
收藏
页码：3560 / 3566
页数：7
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