Nonradiative electron-hole recombination in ZnSSe epitaxial layers examined by piezoelectric photothermal spectroscopy

被引：1
作者：
Yoshino, K
Memon, A
Yoneta, M
Ando, K
机构：
[1] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan
[2] Okayama Univ Sci, Dept Appl Phys, Okayama 7000005, Japan
[3] Tottori Univ, Dept Elect & Elect Engn, Minami Ku, Tottori 6808552, Japan
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2003年 / 14卷 / 5-7期
关键词：
D O I：
10.1023/A:1023973322824
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Piezoelectric photothermal (PPT) and photoluminescence (PL) spectra could be successfully observed at low temperatures for nondoped ZnSe and ZnS0.08Se0.92 epitaxial layers grown by molecular beam epitaxy. The donor bound exciton (I-2) and free-to-acceptor (FA) emission bands were dominant in the PL spectra of both samples. A dominant acceptor-type defect on the FA emission might not be due to S-related defects because the PL emission from this defect was observed in both the ZnSe and ZnSSe samples. Furthermore, this acceptor-type impurity behaved as both electron-hole nonradiative and radiative recombination centers because the distinct signals appeared in the PPT and PL spectra of the ZnSSe sample. (C) 2003 Kluwer Academic Publishers.
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页码：421 / 425
页数：5
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