Optical Properties of InAs Quantum Dots/GaAs Waveguides for Ultra-fast Scintillators

被引：11

作者：

Dropiewski, K. ^{[1
]}

Minns, A. ^{[1
]}

Yakimov, M. ^{[1
]}

Tokranov, V ^{[1
]}

Murat, P. ^{[2
]}

Oktyabrsky, S. ^{[1
]}

机构：

[1] SUNY Polytech Inst, 257 Fuller Rd, Albany, NY 12203 USA

[2] Fermilab Natl Accelerator Lab, POB 500, Batavia, IL 60510 USA

来源：

JOURNAL OF LUMINESCENCE | 2020年 / 220卷

基金：

美国国家科学基金会;

关键词：

TIME; STABILITY; LIMITS;

D O I：

10.1016/j.jlumin.2019.116952

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

InAs Quantum Dots (QDs) embedded in a GaAs matrix have unique scintillation properties, valuable for high-energy physics and medical applications. Temperature-dependent photoluminescence, waveguide attenuation and alpha particle response measurements were employed to analyze the optical properties of a 25 mu m thick waveguiding scintillator. Optimizing the electrostatics of the QD layered structure with p-type modulation doping resulted in QD photoluminescence (PL) efficiency as high as 60% at room temperature. Analysis of attenuation of the QD waveguide showed surface scattering predominated over the first 2-3 mm of light propagation and low (similar to 1 cm(-1)) self-absorption was more significant at longer distances, after the decay of high order modes (high angle light rays). Responses to 5.5 MeV alpha particles from the integrated photodiode on top of the QD scintillator/waveguide (QD/VVG) show an extremely fast (300 ps) decay constant, and a 70 ps time resolution (limited by circuit noise and bandwidth) with a collection efficiency of 17,000 photons per 1 MeV of deposited energy.

引用

页数：9

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