Evaluation of strain in GaN/AlN quantum dots by means of resonant Raman scattering: the effect of capping

被引：1
作者：
Cros, A. [1 ]
Budagosky, J. A. [1 ]
Garro, N. [1 ]
Cantarero, A. [1 ]
Coraux, J. [2 ,3 ]
Renevier, H. [2 ,3 ]
Proietti, M. G. [4 ]
Favre-Nicolin, V. [2 ,3 ]
Daudin, B. [2 ]
机构：
[1] Univ Valencia, Inst Ciencia Mat, Valencia 46071, Spain
[2] CEA Grenoble, DRFMC SP2M PSC, CEA CNRS Grp, Nanophys Semiconduct, F-38054 Grenoble 9, France
[3] Univ Joseph Fourier, F-38041 Grenoble 9, France
[4] CSIC, Univ Zaragoza, Inst Cienc Mat Aragon, Dept Fis Mat Condensada, E-50009 Zaragoza, Spain
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期
关键词：
D O I：
10.1002/pssc.200674804
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have studied in detail changes in the strain state of GaN/AlN quantum dots during the capping process. mu-Raman scattering experiments allowed the detection of a resonant mode which provided information on the evolution of strain with capping. Simultaneously, Multiwavelength Anomalous Diffraction (MAD) and Diffraction Anomalous Fine Structure (DAFS) experiments were performed on the same samples, providing the independent determination of the wurtzite lattice parameters a and c. The remarkable agreement between Raman and X-ray data stands out the suitability of polar vibrational modes for the determination of strain in nanostructures. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Wemheim
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收藏
页码：2379 / +
页数：2
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