An analytical surrounding gate MOSFET model

In this paper we present a complete and analytical drain current model for surrounding gate MOSFETs. The model was developed using a quasi-two-dimensional cylindrical form of the Poisson equation and based on the drift-diffusion equation. The model applicable for digital/analog circuit simulation contains the following advanced features: precise description of the subthreshold, near threshold and above-threshold regions of operation by one single expression; single-piece drain current equation smoothly continuous from the linear region to the saturation region; considering the source/drain resistance; inclusion of important short channel effects such as velocity saturation, drain-induced barrier lowering and channel length modulation. Published by Elsevier Science Ltd. All rights reserved.