Growth and Optical Properties of Nonpolar (10(1)over-bar0) Zn1-xCoxO Epitaxial Film on a γ-LiAlO2 Substrate

被引：2
|
作者：
Wu, Jih-Jen [1 ]
Lin, Sian-Jhang [1 ]
Lin, Wan-Hsien [1 ]
Chou, Mitch M. C. [2 ]
Chang, Liuwen [2 ]
Hwang, Ten-Hsing [2 ]
Chuang, Chia-Hao [3 ]
Chen, Chun-Wei [3 ]
机构：
[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 701, Taiwan
[2] Natl Sun Yat Sen Univ, Dept Mat Sci & Optoelect Engn, Kaohsiung 80424, Taiwan
[3] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 106, Taiwan
来源：
CHEMICAL VAPOR DEPOSITION | 2011年 / 17卷 / 4-6期
关键词：
gamma-LiAlO2; Epitaxial growth; Nonpolar Zn1-xCoxO film; Optical properties; ZNO THIN-FILMS; CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM-EPITAXY; CO-DOPED ZNO; M-PLANE; SAPPHIRE; FERROMAGNETISM; SEMICONDUCTORS; NANORODS; ALLOYS;
D O I：
10.1002/cvde.201006871
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Nonpolar (10 (1) over bar0) Zn1-xCoxO films are grown on gamma-LiAlO2(100) substrates by CVD. X-ray diffraction (XRD), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS) results reveal that Co atoms become incorporated into the ZnO film via a substitution for Zn, when x <= 0.15. The epitaxial relationships between the nonpolar Zn1-xCoxO film and gamma-LiAlO2 substrate are [0001](ZnCoO)parallel to[010](LAO) and [10 (1) over bar0](ZnCoO)parallel to[100](LAO), as determined by TEM. A decrease in the optical band-gap of the nonpolar Zn1-xCoxO film with increasing Co content is observed in absorption measurements.
引用
收藏
页码：88 / 92
页数：5
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