High-efficiency phosphorescent OLEDs using chemically doped layers

被引：0
|
作者：
Watanabe, S [1 ]
Agata, Y
Tanaka, D
Kido, J
机构：
[1] Yamagata Univ, Grad Sch Sci & Engn, Yonezawa, Yamagata 9928510, Japan
[2] Optoelect Ind & Technol Dev Assoc, Bunkyo Ku, Tokyo 1120014, Japan
来源：
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2005年 / 18卷 / 01期
关键词：
chemical doping; EL; phosphorescence; iridium complex; OLED;
D O I：
暂无
中图分类号：
O63 [高分子化学（高聚物）];
学科分类号：
070305 ; 080501 ; 081704 ;
摘要：
Organic light-emitting devices (LEDs) were fabricated using wide-energy-gap (over 3.30 eV) materials and fac-tris(2-phenylpyridine) iridium complex (Ir(ppy)3) as the carrier transporting materials and the emitting material, respectively. The organic layers at the electrode interfaces were chemically doped to reduce operating voltage. The p-type and n-type doped layers have specific resistance of 10(5)similar to 10(6) Omega-cm. The device exhibited green emission peaking at approximately 510 nm, and-the external quantum efficiency of 19.7% (69 cd/A). A high power efficiency of 68 lm/W was observed at 100 cd/m(2) at voltage of 3.22 V.
引用
收藏
页码：83 / 86
页数：4
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