Submicron InP/InGaAs Composite Channel MOSFETs with Selectively Regrown N+-Source/Drain Buried in Channel Undercut

被引：0

作者：

Kanazawa, Toru ^{[1
]}

Wakabayashi, Kazuya ^{[1
]}

Saito, Hisashi ^{[1
]}

Terao, Ryosuke ^{[1
]}

Tajima, Tomonori ^{[1
]}

Ikeda, Shunsuke ^{[1
]}

Miyamoto, Yasuyuki ^{[1
]}

Furuya, Kazuhito ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrated a high-mobility InP 5 nm/InGaAs 12 nm composite channel MOSFET with MOVPE regrown n(+)-source/drain region for low series resistance and high source injection current. A gate dielectric was SiO2 and thickness was 20 nm. A carrier density of regrown InGaAs source/drain layer was over 4 x 10(19) cm(-3). In the measurement of submicron (= 150 nm) device, the drain current was 0.93 mA/mu m at V-g = 3 V, V-d = 1 V and the peak transconductance was 0.53 mS/mu m at V-d = 0.65 V, respectively. The channel length dependence of transconductance indicated the good relativity.

引用

页数：4

共 39 条

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