Submicron InP/InGaAs Composite Channel MOSFETs with Selectively Regrown N+-Source/Drain Buried in Channel Undercut

We demonstrated a high-mobility InP 5 nm/InGaAs 12 nm composite channel MOSFET with MOVPE regrown n(+)-source/drain region for low series resistance and high source injection current. A gate dielectric was SiO2 and thickness was 20 nm. A carrier density of regrown InGaAs source/drain layer was over 4 x 10(19) cm(-3). In the measurement of submicron (= 150 nm) device, the drain current was 0.93 mA/mu m at V-g = 3 V, V-d = 1 V and the peak transconductance was 0.53 mS/mu m at V-d = 0.65 V, respectively. The channel length dependence of transconductance indicated the good relativity.