Stress-enhanced Cu-to-Cu Bonding for MEMS Packaging

被引:2
作者
Song, Jenn-Ming [1 ,2 ,3 ]
Lang, Sin-Yong [1 ]
Xie, Zong-Yu [1 ]
Chiang, Po-Hao [1 ]
Huang, Shang-Kun [4 ]
Chiu, Ying-Ta [4 ]
Tarng, David [4 ]
Hung, Chih-Pin [4 ]
Lin, Jing-Yuan [5 ]
机构
[1] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 402, Taiwan
[2] Natl Chung Hsing Univ, Res Ctr Sustainable Energy & Nanotechnol, Taichung 402, Taiwan
[3] Natl Chung Hsing Univ, Innovat & Dev Ctr Sustainable Agr, Taichung 402, Taiwan
[4] Adv Semicond Engn Grp, Kaohsiung 811, Taiwan
[5] Ind Technol Res Inst, Microsyst Technol Ctr, Hsinchu 310, Taiwan
关键词
MEMS packaging; Cu-to-Cu bonding; air plasma bombardment; formic acid vapor; DIFFUSION; ENERGY;
D O I
10.18494/SAM.2018.1948
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
To replace Al-Ge eutectic bonding, low-temperature direct Cu-to-Cu bonding was developed in this study. Lattice distortion and thus a hardened Cu subsurface conducted by air plasma bombardment, instead of surface activation, contributed to a compressive residual stress component and an accelerated Cu atom diffusion. This gave rise to a significant improvement in direct Cu bonding strength. Subjected to 3-min plasma exposure and the following deoxidation treatment using catalyzed formic acid vapor, robust Cu-to-Cu bonding with the joint strength up to 31.7 MPa can be achieved when bonded at 250 degrees C for 5 min under a loading pressure of 10 MPa in N-2.
引用
收藏
页码:2889 / 2895
页数:7
相关论文
共 21 条
  • [1] Arai Y., 2015, INT C EL PACK IMAPS, P468, DOI 10.1109/ICEP-IAAC.2015.7111060
  • [2] Thermodynamics of diffusion under pressure and stress: Relation to point defect mechanisms
    Aziz, MJ
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (21) : 2810 - 2812
  • [3] Stress evolution and defect diffusion in Cu during low energy ion irradiation: Experiments and modeling
    Chan, Wai Lun
    Chason, Eric
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2008, 26 (01): : 44 - 51
  • [4] Crednerite-CuMnO2 thin films prepared using atmospheric pressure plasma annealing
    Chen, Hong-Ying
    Lin, Yu-Chang
    Lee, Jiann-Shing
    [J]. APPLIED SURFACE SCIENCE, 2015, 338 : 113 - 119
  • [5] Bonding parameters of blanket copper wafer bonding
    Chen, KN
    Fan, A
    Tan, CS
    Reif, R
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (02) : 230 - 234
  • [6] Enhanced Cu-to-Cu direct bonding by controlling surface physical properties
    Chiang, Po-Hao
    Liang, Sin-Yong
    Song, Jenn-Ming
    Huang, Shang-Kun
    Chiu, Ying-Ta
    Hung, Chih-Pin
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (03)
  • [7] Residual stress analysis of thin films and coatings through XRD2 experiments
    Gelfi, M
    Bontempi, E
    Roberti, R
    Armelao, L
    Depero, LE
    [J]. THIN SOLID FILMS, 2004, 450 (01) : 143 - 147
  • [8] Ghica C, 2010, ROM REP PHYS, V62, P329
  • [9] Cosputtered Cu/Ti Bonded Interconnects With a Self-Formed Adhesion Layer for Three-Dimensional Integration Applications
    Hsu, Sheng-Yao
    Chen, Hsiao-Yu
    Chen, Kuan-Neng
    [J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (07) : 1048 - 1050
  • [10] Novel Cu-to-Cu Bonding With Ti Passivation at 180 °C in 3-D Integration
    Huang, Yan-Pin
    Chien, Yu-San
    Tzeng, Ruoh-Ning
    Shy, Ming-Shaw
    Lin, Teu-Hua
    Chen, Kou-Hua
    Chiu, Chi-Tsung
    Chiou, Jin-Chern
    Chuang, Ching-Te
    Hwang, Wei
    Tong, Ho-Ming
    Chen, Kuan-Neng
    [J]. IEEE ELECTRON DEVICE LETTERS, 2013, 34 (12) : 1551 - 1553