Correlation between exciton polarized lifetime and fine structure splitting in InAs/GaAs quantum dots

被引:2
作者
Chen, Hao [1 ,2 ]
Zhuo, Zhiyao [1 ,2 ]
Huang, Junhui [1 ,2 ]
Dou, Xiuming [1 ,2 ]
He, Xiaowu [1 ,2 ]
Ding, Kun [1 ]
Ni, Haiqiao [1 ,2 ]
Niu, Zhichuan [1 ,2 ,3 ]
Jiang, Desheng [1 ]
Sun, Baoquan [1 ,2 ,3 ]
机构
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
[3] Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China
基金
中国国家自然科学基金;
关键词
SPIN;
D O I
10.1063/1.5142482
中图分类号
O59 [应用物理学];
学科分类号
摘要
Semiconductor self-assembled single quantum dots (QDs) provide a promising solid-state light source for single photons and entangled photons. The structural asymmetry in QDs results in fine structure splitting (FSS) of exciton and biexciton emission lines. Here, we propose a method to study QD symmetry by measuring the difference in two different polarized lifetimes of QD excitonic emission lines under applied stress. The method can be reasonably correlated with the direct FSS measurement. Actually, due to the limitation of the resolution of the spectrometer, the zero value of FSS is difficult to measure. Instead, the lifetime measurement is an effective method to judge the symmetry condition of single QDs.
引用
收藏
页数:4
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