Configuration selection in the simulations of the crystallization of short polyethylene chains in a free-standing thin film

被引:12
|
作者
Xu, GQ [1 ]
Lin, H [1 ]
Mattice, WL [1 ]
机构
[1] Univ Akron, Dept Polymer Sci, Akron, OH 44325 USA
来源
JOURNAL OF CHEMICAL PHYSICS | 2003年 / 119卷 / 13期
关键词
D O I
10.1063/1.1603724
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The configuration of thin films of short polyethylene chains during the crystallization has been investigated using a recently developed Monte Carlo method on a high coordination lattice, which bridges the coarse-grained and the fully atomistic simulations. Thin films select their own crystal configurations, in which the chains have different orientations with respect to the surface normal. Two kinds of crystal structures, with and without grain boundary in the center of the thin films, in which all the chains are parallel to the free surface, have been found after a deep quench from an equilibrated thin film above the melting temperature in the previous simulations [J. Chem. Phys. 116, 2277 (2002)]. However, another crystal configuration shows up after a quench from the thin film formed by increasing the periodic boundary conditions in one direction from a homogeneous melt. In this configuration all the chains are parallel with each other and to the z axis. This configuration was found both in the experiments and in the previous molecular dynamics simulation of a free-standing thin film of a short alkane. It is demonstrated here that the initial configuration does affect the final structure in the simulation of the crystallization of the free-standing thin film. The current configuration has slightly lower enthalpic and entropic energies and higher melting point than the previous ones. The similarities and differences between three configurations during the crystallization, annealing, and melting processes will be discussed. (C) 2003 American Institute of Physics.
引用
收藏
页码:6736 / 6743
页数:8
相关论文
共 50 条
  • [31] Bendable, Free-Standing Calcite Thin Films
    Nakamura, Shiho
    Naka, Kensuke
    LANGMUIR, 2015, 31 (06) : 2014 - 2018
  • [32] Mechanical testing of free-standing thin films
    Sharpe, WN
    Hemker, KJ
    SURFACE ENGINEERING 2001 - FUNDAMENTALS AND APPLICATIONS, 2001, 697 : 215 - 226
  • [33] Mechanical testing of free-standing thin films
    Sharpe, WN
    Hemker, KJ
    MATERIALS SCIENCE OF MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES IV, 2002, 687 : 293 - 304
  • [34] Thickness dependence of free-standing thin films
    Guerin, Gerald
    PruD'Homme, Robert E.
    JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 2007, 45 (01) : 10 - 17
  • [35] Properties of AlN film deposited on free-standing diamond film
    Zhang, Ying-Ying
    Li, Cheng-Ming
    Chen, Liang-Xian
    Liu, Jin-Long
    Hei, Li-Fu
    Lü, Fan-Xiu
    Cailiao Rechuli Xuebao/Transactions of Materials and Heat Treatment, 2011, 32 (08): : 1 - 5
  • [36] Stress engineering for free-standing SU-8 2002 thin film devices
    Oliver, Kyle W.
    Lukes, Sarah J.
    Moghimi, Mohammad J.
    Dickensheets, David L.
    MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XVII, 2012, 8248
  • [37] Free-Standing Carbon Nanotube Thin Film for Multifunctional Halide-Perovskite Optoelectronics
    Marunchenko A.A.
    Markina D.I.
    Pushkarev A.P.
    Baranov M.A.
    Nasibulin A.G.
    Makarov S.V.
    Bulletin of the Russian Academy of Sciences: Physics, 2022, 86 (Suppl 1) : S127 - S130
  • [38] In-Situ Measurements of Free-Standing, Ultra-Thin Film Cracking in Bending
    Hintsala, E.
    Kiener, D.
    Jackson, J.
    Gerberich, W. W.
    EXPERIMENTAL MECHANICS, 2015, 55 (09) : 1681 - 1690
  • [39] Thin-film free-standing monocrystalline Si solar cells with heterojunction emitter
    Solanki, CS
    Carnel, L
    Van Nieuwenhuysen, K
    Ulyashin, A
    Posthuma, N
    Beaucarne, G
    Poortmans, J
    PROGRESS IN PHOTOVOLTAICS, 2005, 13 (03): : 201 - 208
  • [40] Free-standing ferroelectric multilayers: Crossover from thin-film to bulk behavior
    Prokhorenko, S.
    Pertsev, N. A.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (07)