Spatially dense integration of micron-scale devices from multiple materials on a single chip via transfer-printing

被引：16

作者：

Jevtics, Dimitars ^{[1
]}

Smith, Jack A. ^{[1
]}

McPhillimy, John ^{[1
]}

Guilhabert, Benoit ^{[1
]}

Hill, Paul ^{[1
]}

Klitis, Charalambos ^{[2
]}

Hurtado, Antonio ^{[1
]}

Sorel, Marc ^{[2
,3
]}

Tan, Hark Hoe ^{[4
]}

Jagadish, Chennupati ^{[4
]}

Dawson, Martin D. ^{[1
]}

Strain, Michael J. ^{[1
]}

机构：

[1] Univ Strathclyde, Inst Photon, Dept Phys, Glasgow G1 1RD, Lanark, Scotland

[2] Univ Glasgow, Sch Engn, Glasgow G12 8QQ, Lanark, Scotland

[3] St Anna Sch Adv Studies, Inst Technol Commun Informat & Percept TeCIP, Via Moruzzi 1, I-56127 Pisa, Italy

[4] Australian Natl Univ, Res Sch Phys, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

OPTICAL MATERIALS EXPRESS | 2021年 / 11卷 / 10期

基金：

英国工程与自然科学研究理事会; 欧盟地平线“2020”;

关键词：

EPITAXIAL-GROWTH; WAVE-GUIDE; SILICON; PHOTONICS; LASERS; NANOWIRES;

D O I：

10.1364/OME.432751

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The heterogeneous integration of devices from multiple material platforms onto a single chip is demonstrated using a transfer-printing (TP) technique. Serial printing of devices in spatially dense arrangements requires that subsequent processes do not disturb previously printed components, even in the case where the print head is in contact with those devices. In this manuscript we show the deterministic integration of components within a footprint of the order of the device size, including AlGaAs, diamond and GaN waveguide resonators integrated onto a single chip. Serial integration of semiconductor nanowire (NW) using GaAs/AlGaAs and InP lasers is also demonstrated with device to device spacing in the 1 mu m range.

引用

页码：3567 / 3576

页数：10

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[10]

Jevtics D., DATA SPATIALLY DENSE, V2021, DOI [10.15129/10070904-bb8a-433c-875d-cdd5e6bcda95, DOI 10.15129/10070904-BB8A-433C-875D-CDD5E6BCDA95]

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