Radiation effects in GaInP/GaAs/Ge triple junction solar cells irradiated by 1 MeV and 10 MeV electrons

被引：6

作者：

Wang, Zujun ^{[1
]}

Xue, Yuanyuan ^{[1
]}

Yang, Xie ^{[2
]}

Cui, Xinyu ^{[3
]}

Jia, Tongxuan ^{[4
]}

Jiao, Qianli ^{[4
]}

Nie, Xu ^{[4
]}

Lai, Shankun ^{[4
]}

机构：

[1] Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Irradiat Simulat & E, Xian 710024, Peoples R China

[2] Res Inst Xian High Technol, Xian 710024, Peoples R China

[3] Tianjin Inst Power Sources, Tianjin 300381, Peoples R China

[4] Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2021年 / 1018卷

基金：

美国国家科学基金会;

关键词：

GaInP/GaAs/Ge triple junction solar cells; Radiation effect; Electron irradiation; Displacement damage; Open-circuit voltage; External quantum efficiency;

D O I：

10.1016/j.nima.2021.165763

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The experiments of the GaInP/GaAs/Ge triple junction solar cells (3JSCs) irradiated by 1MeV and 10 MeV electrons at the electron accelerator facility were presented. The radiation effects on the GaInP/GaAs/Ge 3JSCs induced by different energy electrons at high fluence up to 5 x 10(16) e/cm(2) were investigated. The I-V curves degraded with the increasing electron fluence were presented. The degradations of the radiation sensitive parameters such as the open-circuit voltage (V-oc), the short-circuit current (I-sc), the maximum power (P-max), and the external quantum efficiency versus electron fluence were analyzed. The degradations of the V-oc, I-sc, and P-max induced by 1MeV and 10 MeV electrons were compared. The annealing tests after electron irradiation about 3 months show no obvious recovery. The degradation mechanisms of the radiation sensitive parameters are also demonstrated.

引用

页数：5

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