Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters < 30 μm

被引：18
作者：
Lee, In-Hwan [1 ]
Kim, Tae-Hwan [1 ]
Polyakov, A. Y. [2 ]
Chernykh, A. V. [2 ]
Skorikov, M. L. [3 ]
Yakimov, E. B. [2 ,4 ]
Alexanyan, L. A. [2 ]
Shchemerov, I. V. [2 ]
Vasilev, A. A. [2 ]
Pearton, S. J. [5 ]
机构：
[1] Korea Univ, Dept Mat Sci & Engn, Lab Optoelect Mat LOEM, 145Anam Ro, Seoul, South Korea
[2] Natl Univ Sci & Technol MISiS, 4 Leninsky Ave, Moscow 119049, Russia
[3] Russian Acad Sci, PN Lebedev Phys Inst, 53 Leninsky Ave, Moscow 119991, Russia
[4] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Moscow 142432, Russia
[5] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2022年 / 921卷
关键词：
Micro-LEDs; Sidewalls; Recombination; Traps; Defects; DEEP TRAPS;
D O I：
10.1016/j.jallcom.2022.166072
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A matrix of blue GaN/InGaN multi-quantum-well (MQW) micro-Light-Emitting Diodes (micro-LEDs) with diode dimensions ranging from 2 to 100 mu m was prepared by masked dry etching and characterized by Photoluminescence (PL), Microcathodoluminescence (MCL), capacitance-voltage profiling in the dark and under monochromatic illumination, current-voltage measurements, admittance spectra, Deep Level Transient Spectroscopy with electrical (DLTS) and optical (ODLTS) injection. The changes observed in the PL, MCL spectra are due to the formation of deep hole traps at E-v+ 0.75 eV and electron traps at E-c-1 eV in the sidewalls of the micro-LEDs. The former give rise to the red defect band peaked near 600 nm and contribute to the increase of tunneling and leakage current with decreasing the diode diameter. The latter are prominent centers of nonradiative recombination. (C) 2022 Elsevier B.V. All rights reserved.
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页数：8
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