Recent advances in spin-orbit torques: Moving towards device applications

被引:206
|
作者
Ramaswamy, Rajagopalan [1 ]
Lee, Jong Min [1 ]
Cai, Kaiming [1 ]
Yang, Hyunsoo [1 ]
机构
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
来源
APPLIED PHYSICS REVIEWS | 2018年 / 5卷 / 03期
基金
新加坡国家研究基金会;
关键词
ROOM-TEMPERATURE; PERPENDICULAR MAGNETIZATION; FIELD; DRIVEN; CONVERSION; MAGNETORESISTANCE; HETEROSTRUCTURES; DEPENDENCE; ELECTRONS; DYNAMICS;
D O I
10.1063/1.5041793
中图分类号
O59 [应用物理学];
学科分类号
摘要
The ability of spintronic devices to utilize an electric current for manipulating the magnetization has resulted in large-scale developments, such as magnetic random access memories and boosted the spintronic research area. In this regard, over the last decade, magnetization manipulation using spin-orbit torque has been devoted a lot of research attention as it shows a great promise for future ultrafast and power efficient magnetic memories. In this review, we summarize the latest advancements in spin-orbit torque research and highlight some of the technical challenges for practical spin-orbit torque devices. We will first introduce the basic concepts and highlight the latest material choices for spin-orbit torque devices. Then, we will summarize the important advancements in the study of magnetization switching dynamics using spin-orbit torque, which are important from scientific as well as technological aspects. The final major section focuses on the concept of external assist field-free spin-orbit torque switching which is a requirement for practical spin-orbit torque devices. Published by AIP Publishing.
引用
收藏
页数:19
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