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Recent advances in spin-orbit torques: Moving towards device applications
被引:206
|作者:
Ramaswamy, Rajagopalan
[1
]
Lee, Jong Min
[1
]
Cai, Kaiming
[1
]
Yang, Hyunsoo
[1
]
机构:
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
来源:
APPLIED PHYSICS REVIEWS
|
2018年
/
5卷
/
03期
基金:
新加坡国家研究基金会;
关键词:
ROOM-TEMPERATURE;
PERPENDICULAR MAGNETIZATION;
FIELD;
DRIVEN;
CONVERSION;
MAGNETORESISTANCE;
HETEROSTRUCTURES;
DEPENDENCE;
ELECTRONS;
DYNAMICS;
D O I:
10.1063/1.5041793
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The ability of spintronic devices to utilize an electric current for manipulating the magnetization has resulted in large-scale developments, such as magnetic random access memories and boosted the spintronic research area. In this regard, over the last decade, magnetization manipulation using spin-orbit torque has been devoted a lot of research attention as it shows a great promise for future ultrafast and power efficient magnetic memories. In this review, we summarize the latest advancements in spin-orbit torque research and highlight some of the technical challenges for practical spin-orbit torque devices. We will first introduce the basic concepts and highlight the latest material choices for spin-orbit torque devices. Then, we will summarize the important advancements in the study of magnetization switching dynamics using spin-orbit torque, which are important from scientific as well as technological aspects. The final major section focuses on the concept of external assist field-free spin-orbit torque switching which is a requirement for practical spin-orbit torque devices. Published by AIP Publishing.
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页数:19
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