Integration of a gate electrode into carbon nanotube devices for scanning tunneling microscopy

被引：9

作者：

Kong, J ^{[1
]}

LeRoy, BJ ^{[1
]}

Lemay, SG ^{[1
]}

Dekker, C ^{[1
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 11期

关键词：

D O I：

10.1063/1.1883301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a fabrication process for incorporating a gate electrode into suspended single-walled carbon nanotube structures for scanning tunneling spectroscopy studies. The nanotubes are synthesized by chemical vapor deposition directly on a metal surface. The high temperature (800 degrees C) involved in the growth process poses challenging issues such as surface roughness and integrity of the structure which are addressed in this work. We demonstrate the effectiveness of the gate on the freestanding part of the nanotubes by performing tunneling spectroscopy that reveals Coulomb blockade diamonds. Our approach enables combined scanning tunneling microscopy and gated electron transport investigations of carbon nanotubes. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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